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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole PNP Single Bipolar (BJT) Transistor 15 @ 3A 4V 6A 65W 3MHz
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Buying Options
Total Price: USD $8.03
Unit Price: USD $8.0294
≥1 USD $8.0294
≥10 USD $6.58825
≥100 USD $6.3821
≥500 USD $6.1769
≥1000 USD $5.97075
Inventory: 1171
Minimum: 1
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Technical Details

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Weight 1.8g

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC -80V
Max Power Dissipation 65W
Current Rating -6A
Base Part Number BD244
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 65W
Power - Max 65W
Gain Bandwidth Product 3MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 6A
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 80V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 15

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Lead Free

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