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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole NPN Single Bipolar (BJT) Transistor 25 @ 1A 4V 3A 40W 3MHz
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Buying Options
Total Price: USD $0.57
Unit Price: USD $0.572
≥1 USD $0.572
≥10 USD $0.472736
≥100 USD $0.3432
≥500 USD $0.286739
≥1000 USD $0.244033
≥3000 USD $0.217342
Inventory: 871
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status Non-RoHS Compliant

Technical

hFE Min 25
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 90V
Frequency - Transition 3MHz
Max Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.2V
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Collector Emitter Breakdown Voltage 25V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Max Collector Current 3A
Collector Emitter Voltage (VCEO) 1.2V
Transistor Type NPN
Gain Bandwidth Product 3MHz
Power - Max 40W
Element Configuration Single
Polarity NPN
Base Part Number BD241
Current Rating 3A
Max Power Dissipation 40W
Voltage - Rated DC 100V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2009
Packaging Tube
Operating Temperature -65°C~150°C TJ

Physical

Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Surface Mount, Through Hole

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 1 week ago)

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