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RoHS
RoHS RoHS compliant
Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT PNP Epitaxial Sil
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Buying Options
Total Price: USD $5.92
Unit Price: USD $5.9223
≥1 USD $5.9223
≥10 USD $4.85925
≥100 USD $4.70725
≥500 USD $4.55525
≥1000 USD $4.4042
Inventory: 1253
Minimum: 1
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Technical Details

Technical

Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature 150°C TJ
hFE Min 25
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -100V
Max Breakdown Voltage 100V
Collector Emitter Saturation Voltage -600mV
Transition Frequency 3MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 2V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 80V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 3MHz
Transistor Application SWITCHING
Power Dissipation 25W
Element Configuration Single
Number of Elements 1
Base Part Number BD238
Frequency 3MHz
Current Rating -2A
Max Power Dissipation 25W
Voltage - Rated DC -80V

Physical

Transistor Element Material SILICON
Weight 761mg
Number of Pins 3
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Factory Lead Time 6 Weeks

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.25mm
Length 8mm
Height 11mm

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