BD238G
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT 2A 80V 25W PNP
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
hFE Min 40
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector Emitter Saturation Voltage 600mV
Transition Frequency 3MHz
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 80V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 3MHz
Transistor Application AMPLIFIER
Power Dissipation 25W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Frequency 3MHz
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 25W
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2003
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
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