BD13910S
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
1.5 A, 80 V NPN Bipolar Power Transistor
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Total Price: USD $0.22
Unit Price: USD $0.22
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Inventory: 1099
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
hFE Min 40
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Max Collector Current 1.5A
Collector Emitter Voltage (VCEO) 80V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application SWITCHING
Power Dissipation 1.25W
Element Configuration Single
Number of Elements 1
Base Part Number BD139
Current Rating 1.5A
Max Power Dissipation 1.25W
Voltage - Rated DC 80V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 761mg
Number of Pins 3
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 6 Weeks
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