BD13610STU
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
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Buying Options
Total Price: USD $0.74
Unit Price: USD $0.7392
≥1 USD $0.7392
≥10 USD $0.61336
≥100 USD $0.44513
≥500 USD $0.37195
≥1000 USD $0.316562
Inventory: 1247
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Dimensions
Width 3.25mm
Length 8mm
Height 11mm
Technical
hFE Min 40
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -45V
Max Breakdown Voltage 400V
Collector Emitter Saturation Voltage -500mV
Transition Frequency 75MHz
Collector Emitter Breakdown Voltage 45V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Max Collector Current 1.5A
Collector Emitter Voltage (VCEO) 45V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application SWITCHING
Power Dissipation 1.25W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Base Part Number BD136
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating -1.5A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 1.25W
Voltage - Rated DC -45V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 761mg
Number of Pins 3
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 6 Weeks
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