Max Junction Temperature (Tj) 150°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 80V
Max Breakdown Voltage 65V
Collector Emitter Saturation Voltage 90mV
Transition Frequency 300MHz
Collector Emitter Breakdown Voltage 65V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 65V
Polarity/Channel Type NPN
Gain Bandwidth Product 300MHz
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 310mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ