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BC640-016G

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 2V 100nA ICBO 625mW 150MHz
PDF
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Buying Options
Total Price: USD $8.97
Unit Price: USD $8.9661
≥1 USD $8.9661
≥10 USD $7.3568
≥100 USD $7.1269
≥500 USD $6.897
≥1000 USD $6.6671
Inventory: 1125
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)

Physical

Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating -500mA
Frequency 150MHz
Base Part Number BC640
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -250mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 25

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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