BC639G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 150mA 2V 100nA ICBO 625mW 200MHz
PDF
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.8854
≥1 USD $0.8854
≥10 USD $0.72675
≥100 USD $0.70395
≥500 USD $0.68115
≥1000 USD $0.65835
Inventory: 1165
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Physical
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1996
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC639
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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