BC638G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 150mA 2V 100nA ICBO 625mW 150MHz
PDF
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Buying Options
Total Price: USD $0.64
Unit Price: USD $0.64315
≥1 USD $0.64315
≥10 USD $0.5282
≥100 USD $0.5111
≥500 USD $0.49495
≥1000 USD $0.4788
Inventory: 47965
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 25
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage -500mV
Transition Frequency 150MHz
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 500mV
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 150MHz
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number BC638
Time@Peak Reflow Temperature-Max (s) 40
Frequency 150MHz
Current Rating -500mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -60V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2005
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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