BC637G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 150mA 2V 100nA ICBO 625mW 200MHz
PDF
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Buying Options
Total Price: USD $0.11
Unit Price: USD $0.109486
≥1 USD $0.109486
≥10 USD $0.103286
≥100 USD $0.097443
≥500 USD $0.091926
≥1000 USD $0.086721
Inventory: 1242
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 25
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 200MHz
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number BC637
Time@Peak Reflow Temperature-Max (s) 40
Frequency 200MHz
Current Rating 1A
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 60V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Contact Plating Copper, Silver, Tin
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
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