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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 150mA 2V 1A 625mW 100MHz
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Buying Options
Total Price: USD $0.05
Unit Price: USD $0.0528
≥1 USD $0.0528
Inventory: 36876
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status Non-RoHS Compliant
REACH SVHC No SVHC

Dimensions

Width 6.35mm
Length 6.35mm
Height 6.35mm

Technical

hFE Min 40
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Frequency - Transition 200MHz
Max Breakdown Voltage 60V
Collector Emitter Saturation Voltage 500mV
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Gain Bandwidth Product 200MHz
Power - Max 625mW
Power Dissipation 1W
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number BC637
Frequency 100MHz
Current Rating 1A
Max Power Dissipation 625mW
Voltage - Rated DC 60V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Termination Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2002
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Weight 201mg
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 1 week ago)

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