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RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 420 @ 2mA 5V 15nA ICBO 500mW 150MHz
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

hFE Min 110
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -80V
Collector Emitter Saturation Voltage -250mV
Collector Emitter Breakdown Voltage 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 650mV
Transistor Type PNP
Gain Bandwidth Product 150MHz
Power Dissipation 500mW
Element Configuration Single
Number of Elements 1
Base Part Number BC556
Frequency 150MHz
Current Rating -100mA
Max Power Dissipation 500mW
Voltage - Rated DC -65V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ

Physical

Weight 178.2mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole

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