BC549BBU
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 100mA 500mW 300MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Continuous Collector Current 100mA
hFE Min 110
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 30V
Collector Emitter Saturation Voltage 200mV
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Gain Bandwidth Product 300MHz
Power Dissipation 500mW
Element Configuration Single
Number of Elements 1
Base Part Number BC549
Frequency 300MHz
Current Rating 100mA
Max Power Dissipation 500mW
Voltage - Rated DC 30V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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