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RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN Single Bipolar (BJT) Transistor 110 @ 2mA 5V 100mA 500mW 300MHz
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC

Dimensions

Width 6.35mm
Length 6.35mm
Height 6.35mm

Technical

hFE Min 110
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 30V
Frequency - Transition 300MHz
Collector Emitter Saturation Voltage 200mV
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Gain Bandwidth Product 300MHz
Power - Max 500mW
Power Dissipation 500mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number BC549
Frequency 300MHz
Current Rating 100mA
Max Power Dissipation 500mW
Voltage - Rated DC 30V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Weight 4.535924g
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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