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BC517ZL1G

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 30000 @ 20mA 2V 500nA 625mW 200MHz
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC517
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 20mA 2V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 1V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 10V
hFE Min 30

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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