BC517G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 30000 @ 20mA 2V 500nA 625mW 200MHz
PDF
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Buying Options
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥100 USD $0.2204
≥500 USD $0.2128
≥1000 USD $0.20615
Inventory: 20005
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.19mm
Length 5.2mm
Height 5.33mm
Technical
hFE Min 30
Emitter Base Voltage (VEBO) 10V
Collector Base Voltage (VCBO) 40V
Frequency - Transition 200MHz
Collector Emitter Saturation Voltage 1V
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 20mA 2V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN - Darlington
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Pin Count 3
Base Part Number BC517
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 1A
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 30V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2006
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Contact Plating Copper, Silver, Tin
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
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