Emitter Base Voltage (VEBO) 12V
Collector Base Voltage (VCBO) 80V
Frequency - Transition 200MHz
Max Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1.1V
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 250μA, 250mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Collector Emitter Voltage (VCEO) 80V
Transistor Type NPN - Darlington
Transistor Application AMPLIFIER
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 625mW
Subcategory Other Transistors
Additional Feature EUROPEAN PART NUMBER
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ