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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN DARL 80V 1A TO-92
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
≥10000 USD $0.35815
Inventory: 1107
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC

Technical

Continuous Collector Current 1A
hFE Min 8000
Emitter Base Voltage (VEBO) 12V
Collector Base Voltage (VCBO) 80V
Frequency - Transition 200MHz
Collector Emitter Saturation Voltage 1.1V
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 250μA, 250mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 80V
Transistor Type NPN - Darlington
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number BC373
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 1A
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 80V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2006
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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