BC372G
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN DARL 100V 1A TO-92
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 8000
Emitter Base Voltage (VEBO) 12V
Collector Base Voltage (VCBO) 100V
Frequency - Transition 200MHz
Collector Emitter Saturation Voltage 1.1V
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 250μA, 250mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 100V
Transistor Type NPN - Darlington
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 1A
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 100V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2006
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
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