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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 210MHz
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Buying Options
Total Price: USD $0.11
Unit Price: USD $0.10735
≥1 USD $0.10735
≥10 USD $0.08835
≥100 USD $0.0855
≥500 USD $0.08265
≥1000 USD $0.0798
≥10000 USD $0.0722
Inventory: 1331
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.19mm
Length 5.2mm
Height 5.33mm

Technical

hFE Min 100
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector Emitter Saturation Voltage 700mV
Transition Frequency 210MHz
Collector Emitter Breakdown Voltage 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 45V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 210MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number BC337
Time@Peak Reflow Temperature-Max (s) 40
Frequency 210MHz
Current Rating 800mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 45V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Contact Plating Copper, Silver, Tin

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Factory Lead Time 48 Weeks

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