BC337-016G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 210MHz
PDF
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Buying Options
Total Price: USD $0.07
Unit Price: USD $0.065051
≥1 USD $0.065051
≥10 USD $0.061368
≥100 USD $0.057895
≥500 USD $0.054614
≥1000 USD $0.051525
Inventory: 1167
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 100
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector Emitter Saturation Voltage 700mV
Collector Emitter Breakdown Voltage 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 700mV
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 210MHz
Element Configuration Single
Base Part Number BC337
Current Rating 800mA
Max Power Dissipation 625mW
Voltage - Rated DC 45V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2005
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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