BC327G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 260MHz
PDF
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Buying Options
Total Price: USD $0.11
Unit Price: USD $0.106255
≥1 USD $0.106255
≥10 USD $0.100235
≥100 USD $0.094566
≥500 USD $0.089212
≥1000 USD $0.084161
Inventory: 1250
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 100
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) -50V
Collector Emitter Saturation Voltage -700mV
Transition Frequency 260MHz
Collector Emitter Breakdown Voltage 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 700mV
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 260MHz
Transistor Application AMPLIFIER
Power - Max 625mW
Power Dissipation 1.5W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number BC327
Time@Peak Reflow Temperature-Max (s) 40
Frequency 260MHz
Current Rating -800mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -45V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2009
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
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