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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP Single Bipolar (BJT) Transistor 160 @ 100mA 1V 800mA 625mW 100MHz
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.0616
≥1 USD $0.0616
Inventory: 35813
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC

Technical

hFE Min 100
Emitter Base Voltage (VEBO) -5V
Frequency - Transition 100MHz
Collector Emitter Saturation Voltage -700mV
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 45V
Collector Emitter Breakdown Voltage 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 45V
Transistor Type PNP
Gain Bandwidth Product 100MHz
Power - Max 625mW
Power Dissipation 625mW
Element Configuration Single
Polarity PNP
Number of Elements 1
Base Part Number BC327
Frequency 100MHz
Current Rating -800mA
Max Power Dissipation 625mW
Voltage - Rated DC -50V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Weight 200mg
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Reverse, Through Hole
Contact Plating Tin

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