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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 45V 0.1A TO-92
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

hFE Min 270
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector Emitter Saturation Voltage 200mV
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 600mV
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 200MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number BC237
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 100mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 350mW
Voltage - Rated DC 45V
Subcategory Other Transistors
HTS Code 8541.21.00.75
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2006
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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