AML2002
RoHS
/
Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
NPN EPITAXIAL PLANAR SILICON TRANSISTOR LED BACK LIGHT
PDF
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Buying Options
Total Price: USD $0.31
Unit Price: USD $0.308
≥1 USD $0.308
Inventory: 11844
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 200
Emitter Base Voltage (VEBO) 8V
Collector Base Voltage (VCBO) 220V
Collector Emitter Saturation Voltage 125mV
Transition Frequency 120MHz
Collector Emitter Breakdown Voltage 200V
Vce Saturation (Max) @ Ib, Ic 220mV @ 35mA, 350mA
Current - Collector Cutoff (Max) 1μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 5V
Max Collector Current 700mA
Collector Emitter Voltage (VCEO) 220mV
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 120MHz
Transistor Application SWITCHING
Lens Style Flat
Power - Max 1.5W
Case Connection ISOLATED
Element Configuration Single
Number of Elements 1
Pin Count 3
Max Power Dissipation 1.5W
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2012
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Alternative Model
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