2SD1835T-AA
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 2V 100nA ICBO 750mW 150MHz
PDF
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.415835
≥1 USD $0.415835
≥10 USD $0.392298
≥100 USD $0.370092
≥500 USD $0.34914
≥1000 USD $0.329385
Inventory: 1241
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 100
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Max Breakdown Voltage 50V
Collector Emitter Saturation Voltage 150mV
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN
Gain Bandwidth Product 150MHz
Power - Max 750mW
Element Configuration Single
Pin Count 3
Base Part Number 2SD1835
Max Power Dissipation 750mW
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2003
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 4 Weeks
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