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2SD1816T-H

ON Semiconductor
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole NPN SINGLE Bipolar (BJT) Transistor 200 @ 500mA 5V 1muA ICBO 1W 180MHz
PDF
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Buying Options
Total Price: USD $0.38
Unit Price: USD $0.379542
≥1 USD $0.379542
≥10 USD $0.358057
≥100 USD $0.337789
≥500 USD $0.318672
≥1000 USD $0.300632
Inventory: 1087
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)

Physical

Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position SINGLE
Base Part Number 2SD1816
Pin Count 3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 180MHz
Frequency - Transition 180MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 6V
hFE Min 70

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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