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2SD1207S-AE

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 2V 2A 1W 150MHz
PDF
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Buying Options
Total Price: USD $1.65
Unit Price: USD $1.64825
≥1 USD $1.64825
≥10 USD $1.3528
≥100 USD $1.31005
≥500 USD $1.26825
≥1000 USD $1.2255
Inventory: 1402
Minimum: 1
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Supplier Device Package 3-MP

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Base Part Number 2SD1207
Polarity NPN
Element Configuration Single
Power - Max 1W
Gain Bandwidth Product 150MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Max Frequency 1MHz
Collector Emitter Saturation Voltage 150mV
Max Breakdown Voltage 50V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V

Dimensions

Height 8.5mm
Length 6mm
Width 4.7mm

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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