2SD1060S-1EX
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT BIP NPN 5A 50V
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Inventory: 9862
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.75W
Power - Max 1.75W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 1A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 30MHz
Collector Base Voltage (VCBO) 60V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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