2SD1060R-1EX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT BIP NPN 5A 50V
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Collector Base Voltage (VCBO) 60V
Frequency - Transition 30MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 2V
Max Collector Current 5A
Collector Emitter Voltage (VCEO) 300mV
Transistor Type NPN
Power - Max 1.75W
Max Power Dissipation 1.75W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Published 2013
Packaging Tube
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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