2SD1012G-SPA
RoHS
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Package 3-SIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 280 @ 50mA 2V 700mA 250mW 250MHz
PDF
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Buying Options
Total Price: USD $0.94
Unit Price: USD $0.9443
≥1 USD $0.9443
≥10 USD $0.7752
≥100 USD $0.75145
≥500 USD $0.72675
≥1000 USD $0.703
Inventory: 10010
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 280
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 20V
Collector Emitter Saturation Voltage 30mV
Current - Collector (Ic) (Max) 700mA
Collector Emitter Breakdown Voltage 15V
Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 1μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 50mA 2V
Max Collector Current 700mA
Collector Emitter Voltage (VCEO) 15V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 250MHz
Element Configuration Single
Pin Count 3
Base Part Number 2SD1012
Max Power Dissipation 250mW
Subcategory Other Transistors
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2012
Packaging Bulk
Operating Temperature 125°C TJ
Physical
Number of Pins 3
Surface Mount NO
Package / Case 3-SIP
Mounting Type Through Hole
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