Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation 800mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 400mV
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA
Collector Emitter Breakdown Voltage 100V
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 6V