2SC3332R
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT BIP NPN 0.7A 160V
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Continuous Collector Current 700mA
DC Current Gain-Min (hFE) 100
Collector Current-Max (IC) 0.7A
hFE Min 100
Emitter Base Voltage (VEBO) 6V
Transition Frequency 120MHz
Collector Emitter Voltage (VCEO) 160V
Transistor Application SWITCHING
Configuration SINGLE
Polarity NPN
Number of Elements 1
Pin Count 3
Terminal Position BOTTOM
Max Power Dissipation 700mW
HTS Code 8541.21.00.75
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2014
Packaging Bulk
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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