2SB1201T-E
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP 3 Bipolar (BJT) Transistor 200 @ 100mA 2V 100nA ICBO 800mW 150MHz
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.480082
≥1 USD $0.480082
≥10 USD $0.452905
≥100 USD $0.427263
≥500 USD $0.403086
≥1000 USD $0.38027
Inventory: 1156
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
hFE Min 100
Emitter Base Voltage (VEBO) -6V
Collector Base Voltage (VCBO) 60V
Frequency - Transition 150MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 50V
Transistor Type PNP
Power - Max 800mW
Pin Count 3
Base Part Number 2SB1201
Max Power Dissipation 800mW
Terminal Finish Tin/Bismuth (Sn/Bi)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e6
Published 2012
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Supply Chain
Factory Lead Time 11 Weeks
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