2SA1381CSTU
RoHS
/
Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 10mA 10V 100nA ICBO 7W 150MHz
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 7W
Frequency 150MHz
Base Part Number 2SA1381
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 7W
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 150MHz
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) -5V
hFE Min 40
Compliance
RoHS Status RoHS Compliant
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