2N6519TA
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 50mA 10V 50nA ICBO 625mW 200MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 45
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -300V
Collector Emitter Breakdown Voltage 300V
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 1V
Transistor Type PNP
Gain Bandwidth Product 200MHz
Power - Max 625mW
Power Dissipation 625W
Element Configuration Single
Number of Elements 1
Base Part Number 2N6519
Frequency 200MHz
Current Rating -500mA
Max Power Dissipation 625mW
Voltage - Rated DC -300V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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