2N6426G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 30000 @ 100mA 5V 500mA 625mW 40V
PDF
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Buying Options
Total Price: USD $2.2
Unit Price: USD $2.201618
≥1 USD $2.201618
≥10 USD $2.077
≥100 USD $1.959435
≥500 USD $1.848519
≥1000 USD $1.743887
Inventory: 1130
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 4.19mm
Length 5.2mm
Height 5.33mm
Technical
Continuous Collector Current 500mA
Emitter Base Voltage (VEBO) 12V
Collector Base Voltage (VCBO) 40V
Collector Emitter Saturation Voltage 1.2V
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Current - Collector Cutoff (Max) 1μA
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 100mA 5V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 40V
Transistor Type NPN - Darlington
Power Dissipation 625mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Pin Count 3
Base Part Number 2N6426
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 500mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 40V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Contact Plating Copper, Silver, Tin
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
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