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2N6338G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-204AA, TO-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description ON SEMICONDUCTOR - 2N6338G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 40 MHz, 200 W, 25 A, 40 hFE
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Buying Options
Total Price: USD $101.79
Unit Price: USD $101.7944
≥1 USD $101.7944
≥10 USD $98.5112
≥100 USD $95.22705
≥500 USD $85.3765
Inventory: 1060
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

hFE Min 50
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 120V
Collector Emitter Saturation Voltage 1.8V
Transition Frequency 40MHz
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max) 50μA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10A 2V
Max Collector Current 25A
Collector Emitter Voltage (VCEO) 100V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 40MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Power Dissipation 200W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 2
Base Part Number 2N6338
Time@Peak Reflow Temperature-Max (s) 40
Frequency 40MHz
Current Rating 25A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Terminal Form PIN/PEG
Terminal Position BOTTOM
Max Power Dissipation 200W
Voltage - Rated DC 100V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2006
Packaging Tray
Operating Temperature -65°C~200°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 2
Surface Mount NO
Package / Case TO-204AA, TO-3
Mounting Type Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 2 Weeks

Alternative Model

IXTA70N085T

IXTA70N085T

IXYS

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