2N5686G
RoHS 
RoHS compliant
RoHS compliantPackage TO-204AE
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Propósito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
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Buying Options
Total Price: USD $16.31
Unit Price: USD $16.3064
≥1 USD $16.3064
≥10 USD $14.36424
≥100 USD $13.199296
≥500 USD $12.423048
≥1000 USD $12.034792
≥3000 USD $11.25835
Inventory: 175
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 26.67mm
Length 38.86mm
Height 8.51mm
Technical
hFE Min 15
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector Emitter Saturation Voltage 1V
Transition Frequency 2MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 5V @ 10A, 50A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 25A 2V
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 80V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 2MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Power Dissipation 300W
Element Configuration Single
Number of Elements 1
Pin Count 2
Base Part Number 2N5686
Time@Peak Reflow Temperature-Max (s) 40
Frequency 2MHz
Current Rating 50A
Peak Reflow Temperature (Cel) 260
Terminal Form PIN/PEG
Terminal Position BOTTOM
Max Power Dissipation 300W
Voltage - Rated DC 80V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2006
Packaging Tray
Operating Temperature -65°C~200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 2
Surface Mount NO
Package / Case TO-204AE
Mounting Type Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Alternative Model
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