2N5655G
RoHS
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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 30 @ 100mA 10mV 100muA 20W 10MHz
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Buying Options
Total Price: USD $0.29
Unit Price: USD $0.29441
≥1 USD $0.29441
≥10 USD $0.27774
≥100 USD $0.26202
≥500 USD $0.24719
≥1000 USD $0.2332
≥3000 USD $0.22
Inventory: 5000
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation 20W
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 10MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5655
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 10MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA 10mV
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 10V @ 100mA, 500mA
Collector Emitter Breakdown Voltage 250V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 275V
Emitter Base Voltage (VEBO) 6V
hFE Min 30
Dimensions
Height 6.35mm
Length 6.35mm
Width 6.35mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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