2N5551TFR
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
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Buying Options
Total Price: USD $0.32
Unit Price: USD $0.3168
≥1 USD $0.3168
≥10 USD $0.21472
≥100 USD $0.104808
≥500 USD $0.087419
≥1000 USD $0.060738
Inventory: 1128
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
hFE Min 80
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 180V
Frequency - Transition 100MHz
Max Breakdown Voltage 160V
Collector Emitter Saturation Voltage 200mV
Transition Frequency 100MHz
Collector Emitter Breakdown Voltage 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 160V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 300MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Base Part Number 2N5551
Frequency 300MHz
Current Rating 600mA
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 160V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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