2N5551TAR
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 160V 0.6A TO-92
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 80
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 180V
Frequency - Transition 100MHz
Collector Emitter Saturation Voltage 200mV
Collector Emitter Breakdown Voltage 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 160V
Transistor Type NPN
Gain Bandwidth Product 300MHz
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Base Part Number 2N5551
Frequency 300MHz
Current Rating 600mA
Max Power Dissipation 625mW
Voltage - Rated DC 160V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Weight 178.2mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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