2N5551CTA
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 50nA ICBO 625mW 300MHz
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Inventory: 7340
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 178.2mg
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 160V
Max Power Dissipation 625mW
Current Rating 600mA
Frequency 300MHz
Base Part Number 2N5551
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 200mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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