2N5551_J18Z
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN 2N5551 Bipolar (BJT) Transistor 80 @ 10mA 5V 600mA 625mW 100MHz
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Technical Details
Technical
Frequency - Transition 100MHz
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Transistor Type NPN
Power - Max 625mW
Base Part Number 2N5551
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
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