2N5551
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 600mA 625mW 300MHz
PDF
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Buying Options
Total Price: USD $0.17
Unit Price: USD $0.1672
≥1 USD $0.1672
≥10 USD $0.1584
≥100 USD $0.15048
≥500 USD $0.14168
≥1000 USD $0.13816
Inventory: 2125
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
REACH SVHC No SVHC
Technical
hFE Min 80
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 180V
Frequency - Transition 300MHz
Collector Emitter Saturation Voltage 250mV
Max Frequency 300MHz
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 160V
Collector Emitter Breakdown Voltage 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 160V
Transistor Type NPN
Gain Bandwidth Product 300MHz
Power - Max 625mW
Power Dissipation 350mW
Current 600mA
Element Configuration Single
Voltage 160V
Polarity NPN
Base Part Number 2N5551
Current Rating 600mA
Max Power Dissipation 625mW
Voltage - Rated DC 160V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 1996
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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