2N5550TFR
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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Total Price: USD $0.04
Unit Price: USD $0.0352
≥1 USD $0.0352
Inventory: 5234
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 3.86mm
Length 4.58mm
Height 4.58mm
Technical
hFE Min 60
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 160V
Max Breakdown Voltage 140V
Collector Emitter Saturation Voltage 250mV
Transition Frequency 100MHz
Collector Emitter Breakdown Voltage 140V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 140V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 300MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Base Part Number 2N5550
Frequency 300MHz
Current Rating 600mA
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 140V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2000
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Factory Lead Time 6 Weeks
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