2N5550TF
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 100nA ICBO 625mW 300MHz
PDF
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Buying Options
Total Price: USD $0.03
Unit Price: USD $0.0264
≥1 USD $0.0264
Inventory: 29776
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 60
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 160V
Collector Emitter Saturation Voltage 250mV
Collector Emitter Breakdown Voltage 140V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 140V
Transistor Type NPN
Gain Bandwidth Product 100MHz
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Base Part Number 2N5550
Frequency 300MHz
Current Rating 600mA
Max Power Dissipation 625mW
Voltage - Rated DC 140V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Weight 178.2mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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