2N5550RLRA
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 100nA ICBO 625mW 300MHz
PDF
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.063183
≥1 USD $0.063183
≥10 USD $0.059604
≥100 USD $0.056233
≥500 USD $0.053049
≥1000 USD $0.050044
Inventory: 1140
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
hFE Min 60
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 160V
Collector Emitter Saturation Voltage 250mV
Transition Frequency 100MHz
Collector Emitter Breakdown Voltage 140V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 250mV
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 300MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number 2N5550
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 600mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 140V
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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