2N5401RLRM
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 150V 0.6A TO-92
PDF
/
Inventory: 5712
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
hFE Min 50
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 160V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 100MHz
Current - Collector (Ic) (Max) 600mA
Collector Emitter Breakdown Voltage 150V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 500mV
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 300MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number 2N5401
Time@Peak Reflow Temperature-Max (s) 30
Current Rating -600mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -150V
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2005
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
Recommended For You
2N5401RLRM+price,2N5401RLRM+datasheet,2N5401RLRM+in stock,buy+2N5401RLRM,finder+2N5401RLRM,2N5401RLRM+tutorials,2N5401RLRM+download